Progress in Semiconductor Materials for Optoelectronic Applications Symposium Held November 26-29, 2001, Boston, Massachusetts, U.S.A

The presentations during this four-day symposium emphasize the broad scientific and technological interest in semiconductor materials for optoelectronic applications. This volume focuses on the progress on interband and intersubband transitions in semiconductor materials including III-V, IV, and II-VI materials and quantum structures. Progress on light sources, detectors, modulators, and other novel devices is also featured. A significant portion of the volume addresses materials growth and processing issues for optoelectronic devices, including work on solar cell and laser materials utilizing low nitrogen concentration compounds, VCSELs, quantum dots, and quantum wells, as well as heterostructures. Materials range over the III-V and II-VI semiconductors, including GaAs, CaAsN, InP, ZnSe, and others. Technological applications span infrared detectors, microelectronics, optical materials, laser solar-cell applications and design, and VCSELs.Jones, E. D. is the author of 'Progress in Semiconductor Materials for Optoelectronic Applications Symposium Held November 26-29, 2001, Boston, Massachusetts, U.S.A' with ISBN 9781558996281 and ISBN 1558996281.