Strained si Heterostructure Field Effect Devices

This book brings together the materials science, manufacturing processes, and innovative research and developments of SiGe and strained-Si for the first time in book form. It contains the latest state-of-the-art information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology as well as strain-engineered MOSFETs. The book presents various aspects of silicon heterostructure materials, processes, devices, and applications. It also includes up-to-date research results, a comprehensive list of seminal references, 300 figures, and 30 tables. The diversity of R&D activities and results presented in this book will undoubtedly spark further development in the field.Chattopadhyay, S. is the author of 'Strained si Heterostructure Field Effect Devices ', published 2007 under ISBN 9780750309936 and ISBN 0750309938.