Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III Physics and Technology of Dopant-Defect Interactions III Symposium Held April 17-19, 2001, San Francisco, California, USA

This volume, the third in a popular series from the Materials Research Society, focuses on the phenomena which control the three-dimensional dopant profile in deep sub-micron devices. As device sizes continue to shrink, increasing the dopant activation while simultaneously decreasing the junction depth requires increasing control and understanding of dopant movement. As dopant diffusion and activation are determined by interactions with defects, other atoms, and interfaces, control of dopant behavior requires specific knowledge of these processes. To take advantage of atomistic simulation methods that can be used to model not only the dopant behaviors but now the properties of whole devices, high-precision advanced characterization techniques (e.g., two-dimensional junction profiling) are essential. These problems are by nature cross-disciplinary, and therefore provide an excellent opportunity for materials scientists, silicon technologists, and TCAD researchers to come together to share experimental results and physical models, demonstrate their importance to the technologies, and identify key issues for future research in this field.Foad, M. A. is the author of 'Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III Physics and Technology of Dopant-Defect Interactions III Symposium Held April 17-19, 2001, San Francisco, California, USA' with ISBN 9781558996052 and ISBN 1558996052.