Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices - Towards an Atomic Scale Understanding, St. Petersburg,

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.Garfunkel, Eric is the author of 'Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices - Towards an Atomic Scale Understanding, St. Petersburg,' with ISBN 9780792350088 and ISBN 0792350081.